abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v d r m = 6500 v i t(av)m = 1800 a i t(rms) = 2820 a i tsm = 3210 3 a v t0 = 1.2 v r t = 0.43 m w phase control thyristor 5stp 18m6500 doc. no. 5sya1010-04 may 07 patented free-floating silicon technology low on-state and switching losses designed for traction, energy and industrial applications optimum power handling capability interdigitated amplifying gate blocking maximum rated values 1) parameter symbol conditions 5stp 18m6500 unit max. surge peak forward and reverse blocking voltage v dsm, v rsm t p = 10 ms, f = 5 hz t vj = 5?125c, note 1 6500 v max repetitive peak forward and reverse blocking voltage v drm, v rrm 6500 v max crest working forward and reverse voltages v dwm, v rwm f = 50 hz, t p = 10 ms, t p1 = 250 m s, t vj = 5?125c, note 1, note 2 3300 v critical rate of rise of commutating voltage dv/dt crit exp. to 3750 v, t vj = 125c 2000 v/s characteristic values parameter symbol conditions min typ max unit forward leakage current i drm v drm , t vj = 125c 600 ma reverse leakage current i rrm v rrm , t vj = 125c 600 ma note 1: voltage de-rating factor of 0.11% per c is applicable for tvj below +5 c note 2: recommended minimum ratio of v drm / v dwm or v rrm / v rwm = 2. see app. note 5sya 2051. mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 63 70 84 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 1.85 kg housing thickness h f m = 70 kn, t a = 25 c 35.1 35.5 mm surface creepage distance d s 45 mm air strike distance d a 21 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5stp 18m6500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1010-04 may 07 page 2 of 7 on-state maximum rated values 1) parameter symbol conditions min typ max unit average on-state current i t(av)m half sine wave, t c = 70 c 1800 a rms on-state current i t(rms) 2820 a peak non-repetitive surge current i tsm 3210 3 a limiting load integral i 2 t t p = 10 ms, t vj = 125 c, sine wave after surge: v d = v r = 0 v 5.1210 6 a 2 s peak non-repetitive surge current i tsm 3510 3 a limiting load integral i 2 t t p = 8.3 ms, t vj = 125 c, sine wave after surge: v d = v r = 0 v 510 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v t i t = 1600 a, t vj = 125 c 1.9 v threshold voltage v (t0) 1.2 v slope resistance r t i t = 1000 a - 3000 a, t vj = 125 c 0.43 m w holding current i h t vj = 25 c 125 ma t vj = 125 c 75 ma latching current i l t vj = 25 c 500 ma t vj = 125 c 250 ma switching maximum rated values 1) parameter symbol conditions min typ max unit critical rate of rise of on- state current di/dt crit cont. f = 50 hz 250 a/s critical rate of rise of on- state current di/dt crit t vj = 125 c, i trm = 2000 a, v d 3750 v, i fg = 2 a, t r = 0.5 s cont. f = 1hz 1000 a/s circuit-commutated turn-off time t q t vj = 125c, i trm = 2000 a, v r = 200 v, di t /dt = -1.5 a/s, v d 0.67 v drm , dv d /dt = 20 v/s 800 s characteristic values parameter symbol conditions min typ max unit reverse recovery charge q rr 2400 3600 as reverse recovery current i rm t vj = 125c, i trm = 2000 a, v r = 200 v, di t /dt = -1.5 a/s 40 80 a gate turn-on delay time t gd t vj = 25 c, v d = 0.4 v rm , i fg = 2 a, t r = 0.5 s 3 s
5stp 18m6500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1010-04 may 07 page 3 of 7 triggering maximum rated values 1) parameter symbol conditions min typ max unit peak forward gate voltage v fgm 12 v peak forward gate current i fgm 10 a peak reverse gate voltage v rgm 10 v average gate power loss p g(av) see fig. 9 w characteristic values parameter symbol conditions min typ max unit gate-trigger voltage v gt t vj = 25 c 2.6 v gate-trigger current i gt t vj = 25 c 400 ma gate non-trigger voltage v gd v d = 0.4 x v drm , t vjmax = 125 c 0.3 v gate non-trigger current i gd v d = 0.4 x v drm , t vjmax = 125c 10 ma thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj 125 c storage temperature range t stg -40 140 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 63...84 kn 9 k/kw r th(j-c)a anode-side cooled f m = 63...84 kn 18 k/kw r th(j-c)c cathode-side cooled f m = 63...84 kn 18 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 63...84 kn 1.5 k/kw r th(c-h) single-side cooled f m = 63...84 kn 3 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i c) - th(j ? = i t i 1 2 3 4 r i (k/kw) 6.280 1.070 1.090 0.520 t i (s) 0.8956 0.1606 0.0256 0.0093 fig. 1 transient thermal impedance (junction-to- case) vs. time
5stp 18m6500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1010-04 may 07 page 4 of 7 on-state characteristic model: t i d t i c t i b a t v + + + + = ) 1 ln( max valid for i t = 400 ? 6000 a a b c d 871.410 -3 93.010 -6 -20.810 -3 25.6610 -3 fig. 2 on-state characteristics, t j =125c, 10ms half sine fig. 3 on-state voltage characteristics fig. 4 on-state power dissipation vs. mean on-state current, turn-on losses excluded fig. 5 max. permissible case temperature vs. mean on-state current, switching losses ignored
5stp 18m6500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1010-04 may 07 page 5 of 7 fig. 6 surge on-state current vs. pulse length, half-sine wave fig. 7 surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50hz i gm i gon 100 % 90 % 10 % i gm ? 2..5 a i gon 3 1.5 i gt di g /dt 3 2 a/ m s t r 1 m s t p (i gm ) ? 5...20 m s di g /dt t r t p (i gm ) i g (t) t t p (i gon ) fig. 8 recommended gate current waveform fig. 9 max. peak gate power loss fig. 10 reverse recovery charge vs. decay rate of on-state current fig. 11 peak reverse recovery current vs. decay rate of on-state current
5stp 18m6500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1010-04 may 07 page 6 of 7 turn-on and turn-off losses fig. 12 turn-on energy, half sinusoidal waves fig. 13 turn-on energy, rectangular waves fig. 14 turn-off energy, half sinusoidal waves fig. 15 turn-off energy, rectangular waves q rr i t (t), v(t) t -di t /dt i t (t) -v 0 -v rrm v(t) -i rrm -dv/dt com total power loss for repetitive waveforms: f w f w p p off on t tot + + = where dt i v i t p t t t t t = 0 ) ( 1 fig. 16 current and voltage waveforms at turn-off fig. 17 relationships for power loss
5stp 18m6500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1010-04 may 07 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors g g fig. 18 device outline drawing related documents: 5sya 2020 design of rc-snubber for phase control applications 5sya 2049 voltage definitions for phase control thyristors and diodes 5sya 2051 voltage ratings of high power semiconductors 5sya 2034 gate-drive recommendations for pct's 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors 5szk 9104 specification of environmental class for pressure contact diodes, pcts and gto, storage available on request, please contact factory 5szk 9105 specification of environmental class for pressure contact diodes, pcts and gto, transportation available on request, please contact factory please refer to http://www.abb.com/semiconductors for current version of documents.
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